| PART |
Description |
Maker |
| 2SK3521 2SK3521-01SJ 2SK3521-01S 2SK3521-01L |
N-CHANNEL SILICON POWER MOSFET
From old datasheet system
N-CHANNEL SILICON POWER MOSFET 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FUJI[Fuji Electric]
Fuji Electric Holdings Co., Ltd.
|
| HAT1023R-EL-E HAT1023R |
7 A, 20 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOSFET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| 2SK3560 |
Silicon N-channel power MOSFET For PDP/For high-speed switching 30 A, 230 V, 0.074 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| 2SK3781-01R |
DIODE SCHOTTKY SINGLE 25V 200mW 0.33V-vf 200mA-IFM 2mA-IF 0.5uA-IR SOD-323 3K/REEL 73 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
N-CHANNEL SILICON POWER MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| HAT1024R-EL-E HAT1024R-15 |
3.5 A, 30 V, 0.34 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
| 2SK4183 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
13 A, 525 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Sanyo Semicon Device
|
| 2SK3610-01 |
N-CHANNEL SILICON POWER MOSFET
10 A, 250 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI ELECTRIC CO LTD
|
| HAT2165H-EL-E HAT2165H-15 |
55 A, 30 V, 0.0053 ohm, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel Power MOS FET Power Switching
Old Company Name in Catalogs and Other Documents
|
Renesas Electronics Corporation
|
| RJK0366DPA RJK0366DPA-00-J0 |
25 A, 30 V, 0.0168 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0365DPA RJK0365DPA-00-J0 |
30 A, 30 V, 0.0134 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK1212DNS-00-J5 |
Silicon N Channel Power MOS FET Power Switching
3 A, 120 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET 3.10 X 2.90 MM, HALOGEN AND LEAD FREE, PLASTIC, HWSON-8
|
Renesas Electronics Corporation
|
|
